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| S T M4433 S amHop Microelectronics C orp. MAY . 12 2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max 5 ID -6A R DS (ON) S uper high dense cell design for low R DS (ON). 35 @ V G S = -10V 50 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 30 20 -6 -30 -1.7 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 S T M4433 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c Condition VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS = -10V, ID =-5.8A VGS = -4.5V, ID = -2.0A VDS = -5V, VGS = -10V VDS = -15V, ID = - 5.3A Min Typ C Max Unit -30 -1 100 -1 -1.7 -2.5 V uA nA V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 35 m-ohm 50 m-ohm -15 5 638 217 79 VD = -15V, ID = -1A, VGEN = - 10V, R GE N = 6 -ohm VDS=-15V, ID=-5.3A,VGS=-10V VDS=-15V, ID=-5.3A,VGS=-4.5V VDS =-15V, ID = -5.3A, VGS =-10V 2 A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =-15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 10.5 17.8 124.7 68.3 20.1 10.4 2.3 5 ns ns ns ns nC nC nC nC STM4433 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =-1.7A Min Typ C Max Unit -0.76 -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.Surface Mounted on FR4 Board, t <=10sec. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing. 10 -VGS=4V 25 20 25 C 8 -ID, Drain Current (A) -ID, Drain Current (A) 125 C 15 -55 C 10 6 -VGS=10,9,8,7,6,5V 4 2 -VGS=3V 5 0 0 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 2.4 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), On-Resistance(Ohms) (Normalized) 900 750 Ciss 1.8 1.6 1.4 1.2 1.0 0.8 Figure 2. Transfer Characteristics VGS=-10V ID=-5.8A C, Capacitance (pF) 600 450 300 150 Crss 0 0 5 10 15 20 25 30 Coss 0.6 -55 -25 0 25 50 75 100 125 -VDS, Drain-to Source Voltage (V) Tj, Junction Temperature ( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature 3 S T M4433 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 15 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 V G S =0V gFS , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 V DS =-15V 0 0 5 10 15 10.0 1.0 0.2 0.4 0.6 0.8 1.0 1.2 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent -V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 -ID, Drain C urrent (A) 10 8 6 4 2 0 0 3 6 9 12 15 18 21 24 Qg, T otal G ate C harge (nC ) VDS =-15V ID=-5.3A 10 R DS ( ) ON L im it 10 1s DC 10 0m ms s 1 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 30 50 -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area STM4433 -VDD t on V IN VGS RGEN G 90% toff tr 90% RL D VOUT td(on) VOUT 10% td(off) 90% 10% tf S VIN 50% 10% 50% INVERTED PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 PDM t1 t2 1. RthJA (t)=r (t) * RthJA 2. RthJA=See Datasheet 3. TJM-TA = PDM* RthJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -1 1 10 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5 S T M4433 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. 0.016 TYP. B A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 6 S T M4433 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r 1.5 (MIN) D1 r 1.5 + 0.1 - 0.0 E 12.0 O 0.3 E1 1.75 E2 5.5 O 0.05 P0 8.0 P1 4.0 P2 2.0 O 0.05 T 0.3 O 0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r 330 M 330 O1 N 62 O 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r 12.75 + 0.15 K S 2.0 O 0.15 G R V 7 |
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